| Channel Type |
N|P |
| Channel Mode |
Enhancement |
| Configuration |
Dual |
| Maximum Drain-Source Voltage (V) |
30 |
| Maximum Continuous Drain Current (A) |
3.8@N Channel|2.5@P Channel |
| Maximum Gate-Source Voltage (V) |
±12 |
| Maximum Drain-Source Resistance (mOhm) |
55@10V@N Channel|110@10V@P Channel |
| Typical Gate Charge @ Vgs (nC) |
5.4@4.5V|12.3@10V@Q1|6.5@4.5V|13.8@10V@Q2 |
| Typical Gate Charge @ 10V (nC) |
12.3@Q1|13.8@Q2 |
| Maximum Power Dissipation (mW) |
1300 |
| Category |
Power MOSFET |
| Typical Input Capacitance @ Vds (pF) |
422@15V@Q1|541@15V@Q2 |
| Typical Turn-On Delay Time (ns) |
1.6@Q 1|1.7@Q 2 |
| Typical Turn-Off Delay Time (ns) |
31.2@Q 1|18.3@Q 2 |
| Typical Fall Time (ns) |
15.6@Q 1|2.2@Q 2 |
| Typical Rise Time (ns) |
7.4@Q 1|4.6@Q 2 |
| Maximum Gate-Source Leakage Current (nA) |
100 |
| Maximum Gate Threshold Voltage (V) |
1.5@Q1|1.2@Q2 |
| Maximum IDSS (uA) |
1 |
| Number of Elements per Chip |
2 |
| Minimum Storage Temperature (°C) |
-55 |
| Maximum Storage Temperature (°C) |
150 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |
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